MT45W512KW16BEGB-708 WT TR

8Mb: 512K x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM® 1.0 Memory MT45W512KW16BEGB Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns • VCC, VCCQ voltages – 1.7–1.95V VCC – 1.7–3.6V1 VCCQ • Page mode read access – 16-word page size – Interpage read access: 70ns – Intrapage read access: 20ns • Burst mode write access: continuous burst • Burst mode read access – 4, 8, or 16 words or continuous burst – MAX clock rate: 104 MHz (tCLK = 9.62ns) – Burst initial latency: 38.5ns (4 clocks) at 104 MHz – tACLK: 7ns at 104 MHz • Low power consumption – Asynchronous read: